Electronegative metal dopants improve switching variability in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Al</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> resistive switching devices

Investigation of resistive switching in anodized titanium dioxide thin films

In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself c...

Application of nanomaterials in two-terminal resistive-switching memory devices

Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as...

Modeling the Resistive Switching Process in Transition Metal Oxide Based Non-Volatile Memory Devices

Binary transition metal oxides TiOx, NiOx, HfOx, AlOx, TaOx have been recently proposed as possible materials for embedded non-volatile memory modules. Currently, a major bottleneck in determining the scalability, retention and endurance of these devices, is the lack of detailed understanding of resistive switching mechanism. Generally, the process of forming in transition metal oxides systems ...

Conducting Nanofilaments in Metal Oxide Resistive Switching Memory

Field-induced resistive switching in metal-oxide interfaces

We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accom...